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Wednesday, March 25, 2009

Design Tradeoffs for SSD Performance

SLC NAND-flash (Samsung's K9XXG08UXM series)

Page Read to Register - 25us
Page Program (Write) from Register - 200us
Block Erase - 1.5ms
Serial Access to Register (Data bus) - 100us

Die Size - 2GB
Block Size - 256 KB
Page Size - 4KB
Data Register - 4KB
Planes per die - 4
Dies per package (2GB/4GB/8GB) - 1, 2, or 4
Program/Erase Cycles - 100K

Nitin Agrawal, Vijayan Prabhakaran, Ted Wobber, John D. Davis, Mark Manasse, Rina Panigrahy. Design Tradeoffs for SSD Performance, Usenix Annual Technical Conference (USENIX '08), June 2008, Boston, MA.

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